STE180N10-MOSFET
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  • STE180N10-MOSFET
  • STE180N10
  • MOSFET
  • Vinco Thyristor Module
  • Data Sheet for STE180N10
  • Description

    The STE180N10 is an N-channel enhancement-mode power MOSFET module rated for 180A continuous drain current and a 100V drain-to-source breakdown voltage. Engineered for high-efficiency switching, it delivers low RDS(on) characteristics that minimize conduction losses in high-current circuits. The module package simplifies heatsink mounting and bus bar integration, making it a practical drop-in solution for engineers replacing discrete devices or upgrading legacy designs. Its rugged construction is well-suited for both new designs and direct replacement in installed equipment with long expected service lives.

    The STE180N10 finds broad deployment across industrial and commercial power electronics platforms. Typical applications include DC motor drives and servo amplifiers in manufacturing automation, synchronous rectification stages in switch-mode power supplies, battery formation and charging equipment, UPS systems, and renewable energy inverters operating at lower DC bus voltages. The module's combination of high current capacity and fast switching characteristics also makes it a fit for induction heating power stages and electric vehicle auxiliary drive systems where compact, thermally efficient power switching is essential.

    Quick Reference: STE180N10

    Part Number STE180N10
    Manufacturer STMicroelectronics
    Type N-Channel Power MOSFET Module
    Continuous Drain Current (ID) 180A
    Drain-Source Voltage (VDSS) 100V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the STE180N10:

    • 180A continuous drain current rating with high pulsed current capability for transient load demands
    • 100V VDSS breakdown voltage with avalanche-rated construction for improved ruggedness in inductive switching environments
    • Low RDS(on) reduces conduction losses and thermal dissipation at full rated current
    • Fast switching transition times support high-frequency PWM operation with reduced switching losses
    • Isolated baseplate module package enables direct heatsink mounting and simplified thermal management in high-density assemblies
    • Internal body diode provides freewheeling capability, eliminating the need for external anti-parallel diodes in bridge configurations

    With a factory lead time of 99 weeks for new production, the STE180N10 presents a significant procurement challenge for maintenance operations and project builds that cannot tolerate extended downtime or schedule delays. Equipment manufacturers and facilities running legacy drives or power conversion systems are particularly vulnerable when this part fails unexpectedly. ATI Accurate Technology maintains inventory of hard-to-find and long-lead-time power semiconductors specifically to bridge this gap, providing verified new OEM stock when factory channels are backlogged or the part is otherwise unavailable through standard distribution.

    ATI Accurate Technology is located in Palmetto, Florida, and stocks power semiconductors for immediate fulfillment. Orders placed before 5PM EST ship same day. Whether you need a single replacement unit or volume quantities for a stocking program, ATI offers competitive pricing and responsive service. Contact our team directly at 239-734-7566 or sales@igbts.us for real-time availability, volume pricing, and lead time confirmation on the STE180N10 and related power semiconductor components.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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** 1 Year Warranty on All Products **
In Stock: 6
  • 6
  • 3 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $97.00 USD
Regular price Sale price $97.00 USD
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