SEMIX302GB12E4S-SEMIKRON
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  • SEMIX302GB12E4S-SEMIKRON
  • SEMIX302GB12E4S
  • SEMIKRON
  • International Rectifier IGBT Module
  • Description

    The SEMIX302GB12E4S is a SEMIKRON SEMiX series dual (half-bridge) IGBT power module rated at 300A collector current and 1200V blocking voltage. Built on SEMIKRON's established SEMiX platform, this module integrates fast-recovery freewheeling diodes co-packed with the IGBT chips, delivering low conduction and switching losses in a thermally optimized, electrically isolated baseplate package. The 4S suffix designates the specific package generation, offering optimized creepage and clearance distances for demanding industrial environments. This module is engineered for reliability in continuous, high-duty-cycle power conversion stages.

    The SEMIX302GB12E4S-SEMIKRON is well suited for AC motor drives, regenerative drives, UPS systems, solar inverters, induction heating equipment, and industrial servo amplifiers operating from 480V to 690V AC supply rails. Its half-bridge topology makes it a fundamental building block for three-phase voltage source inverters and active front-end rectifiers. The rugged SEMiX housing with press-fit or screw terminals simplifies bus bar integration and supports high-vibration environments common in heavy industrial and traction-adjacent applications where long mean time between failures is critical.

    Quick Reference: SEMIX302GB12E4S-SEMIKRON

    Part Number SEMIX302GB12E4S-SEMIKRON
    Manufacturer SEMIKRON
    Type Dual IGBT Power Module (Half-Bridge)
    Current Rating 300A (DC Collector Current)
    Voltage Rating 1200V (VCES)
    Availability In Stock — Same-Day Shipping Available
    Condition New OEM

    Key Features of the SEMIX302GB12E4S-SEMIKRON:

    • 1200V VCES blocking voltage with 300A continuous collector current rating for high-power density conversion stages
    • Half-bridge (dual switch) configuration with integrated fast-recovery antiparallel freewheeling diodes, reducing external component count
    • Low VCEsat IGBT technology minimizes on-state conduction losses, improving overall system efficiency at industrial switching frequencies
    • Electrically isolated AlN or Al2O3 ceramic substrate baseplate for direct heatsink mounting without additional insulation pads in standard configurations
    • SEMiX 4S package generation offering enhanced creepage and clearance distances compliant with IEC and UL reinforced insulation requirements
    • Optimized for switching frequencies in the 2–16 kHz range typical of variable frequency drives, solar inverters, and industrial UPS platforms

    The SEMIX302GB12E4S has experienced extended lead times from distribution channels as SEMIKRON's product portfolio transitions following its merger with Danfoss Silicon Power. OEMs and service organizations maintaining legacy drive platforms — including those from ABB, Siemens, Yaskawa, and Danfoss — frequently encounter allocation constraints on SEMiX-series modules. Procurement teams supporting installed bases in paper mills, water treatment, oil and gas, and marine applications cannot afford unplanned downtime waiting on factory lead times that routinely stretch 16 to 26 weeks through standard channels.

    ATI Accurate Technology in Palmetto, Florida stocks hard-to-find and long-lead-time power semiconductors including the SEMIX302GB12E4S-SEMIKRON. Orders placed before 5PM EST ship same day. Contact our team for volume pricing, cross-reference assistance, and availability on related SEMiX series modules. Call 239-734-7566 or email sales@igbts.us to speak with a specialist today.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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In Stock: 3
  • 3
  • 3 (Can ship in We can ship in 7-10 Days)
Regular price $279.00 USD
Regular price Sale price $279.00 USD
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