QM30E3Y-2H-MITSUBISHI
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  • QM30E3Y-2H-MITSUBISHI
  • QM30E3Y-2H
  • MITSUBISHI
  • Mitsubishi Power Semiconductor Module — 03A
  • Data Sheet for QM30E3Y-2H
  • Description

    The Mitsubishi QM30E3Y-2H is a compact, high-performance IGBT module engineered for use in demanding power conversion and motor control applications. Built to Mitsubishi's established quality standards, this module offers low collector-emitter saturation voltage, fast switching characteristics, and an integrated freewheeling diode configuration that simplifies inverter design. Its robust construction supports reliable operation across industrial temperature ranges, making it a dependable choice for engineers who need consistent switching performance in continuous-duty systems where thermal management and switching losses are critical design parameters.

    The QM30E3Y-2H is well-suited for a broad range of industrial applications including variable frequency drives (VFDs), AC servo amplifiers, uninterruptible power supplies (UPS), induction heating systems, and general-purpose inverter platforms. Its current and voltage ratings position it for mid-power industrial equipment where efficiency and switching reliability directly impact system uptime and energy consumption. OEMs and field service teams maintaining legacy drive systems will find this module a direct replacement in platforms originally designed around Mitsubishi's QM-series IGBT lineup.

    Quick Reference: QM30E3Y-2H

    Part Number QM30E3Y-2H
    Manufacturer Mitsubishi
    Type IGBT Module
    Current Rating 30A
    Voltage Rating 600V
    Availability In Stock – Same-Day Shipping
    Condition New OEM

    Key Features of the QM30E3Y-2H:

    • 30A continuous collector current with 600V blocking voltage suitable for mid-range industrial inverter stages
    • Low VCE(sat) reduces conduction losses and minimizes heat dissipation requirements in continuous switching applications
    • Integrated fast-recovery freewheeling diodes eliminate the need for external anti-parallel diodes in inverter bridge configurations
    • Isolated baseplate construction simplifies heatsink mounting and improves thermal interface integrity in enclosed drive assemblies
    • Optimized gate charge and switching time parameters support high-frequency PWM operation with reduced EMI and switching loss
    • Designed to Mitsubishi's QM-series dimensional and pin-out standards, enabling direct drop-in replacement in legacy and current-production platforms

    With a factory lead time of 38 weeks for new production, the QM30E3Y-2H presents a real procurement challenge for maintenance teams dealing with unplanned failures or scheduled refurbishments. Sourcing from distribution inventory is often the only practical path to keeping equipment operational without extended downtime. ATI Accurate Technology maintains stock of hard-to-find and long-lead-time IGBT modules specifically to bridge that gap — providing verified new OEM parts when the factory pipeline simply isn't a viable option for time-sensitive repairs or production schedules.

    ATI Accurate Technology is headquartered in Palmetto, Florida and specializes in power semiconductors including IGBTs, thyristors, diodes, and rectifier modules. We stock the QM30E3Y-2H new OEM and offer same-day shipping on orders received before 5PM EST. Volume pricing is available for MRO stocking programs and OEM builds. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm availability, request a quote, or discuss your project requirements.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 3
  • 3
  • 33 (Can ship in We can ship in 7-10 Days)
  • 38 Weeks
Regular price $147.90 USD
Regular price Sale price $147.90 USD
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