IFS200B12N3E4_B31-INFINEON
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  • IFS200B12N3E4_B31-INFINEON
  • IFS200B12N3E4_B31
  • INFINEON
  • Ixys Power Semiconductor Module
  • Data Sheet for IFS200B12N3E4_B31
  • Description

    The Infineon IFS200B12N3E4_B31 is a 1200V, 200A class IGBT power semiconductor module engineered for high-efficiency switching in industrial power conversion systems. Built on Infineon's proven trench-gate IGBT chip technology, this module delivers low saturation voltage, tight parameter distribution, and robust short-circuit withstand capability. Its optimized thermal interface and isolated baseplate construction make it well-suited for demanding duty cycles where reliability and thermal management are non-negotiable requirements for design and maintenance engineers.

    The IFS200B12N3E4_B31 is a preferred solution in variable frequency drives (VFDs), industrial servo amplifiers, UPS systems, induction heating equipment, and traction converters. Its 1200V blocking voltage and 200A current rating cover a broad range of medium-power three-phase inverter topologies. Renewable energy inverters, welding power supplies, and auxiliary power units in rail and heavy industrial equipment are additional application areas where this module's switching performance and ruggedness provide measurable operational advantages.

    Quick Reference: IFS200B12N3E4_B31

    Part Number IFS200B12N3E4_B31
    Manufacturer Infineon Technologies
    Type IGBT Power Semiconductor Module
    Current Rating 200A
    Voltage Rating 1200V
    Availability In Stock — Same-Day Shipping Available
    Condition New OEM

    Key Features of the IFS200B12N3E4_B31:

    • 1200V collector-emitter voltage (VCES) with 200A continuous collector current rating for medium-power industrial inverter stages
    • Infineon trench-gate IGBT technology delivering low VCEsat for reduced conduction losses at high duty cycles
    • Integrated fast-recovery anti-parallel freewheeling diodes optimized for low reverse recovery charge (Qrr)
    • Isolated copper baseplate for direct heatsink mounting with minimal thermal resistance in the module-to-sink interface
    • Short-circuit withstand capability supporting protection coordination in drives and converter designs
    • B31 configuration variant with application-specific internal topology suited for standard three-phase inverter bridge implementations

    With a published factory lead time of 99 weeks for new production, the IFS200B12N3E4_B31 represents exactly the kind of long-lead-time, hard-to-source component that can bring a production line or field repair to a halt. Design-in projects, MRO stockroom replenishment, and emergency field replacements cannot wait two years for factory fulfillment. Procurement professionals supporting critical industrial infrastructure know that distributor stock is the only practical path when factory pipelines are this extended. Sourcing from a stocking specialist rather than a broker reduces counterfeit risk and ensures traceability back to the original manufacturer.

    ATI Accurate Technology is a power semiconductor distributor based in Palmetto, Florida, specializing in IGBTs, thyristors, diodes, and rectifier modules — including obsolete and long-lead-time parts exactly like the IFS200B12N3E4_B31. Orders placed before 5PM EST ship same day. Volume pricing is available for MRO and OEM quantities. Contact our team directly at 239-734-7566 or sales@igbts.us to confirm stock, request a quote, or discuss application requirements.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
SAME DAY SHIPPING FOR ORDERS PLACED BY 5PM EST ON ALL STOCK ITEMS

** 1 Year Warranty on All Products **
In Stock: 2
  • 2
  • 6 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $989.00 USD
Regular price Sale price $989.00 USD
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