FD800R17KE3_B2-INFINEON
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  • FD800R17KE3_B2
  • FD800R17KE3_B2
  • INFINEON
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  • Data Sheet for FD800R17KE3_B2
  • Description

    The Infineon FD800R17KE3_B2 is a high-current, high-voltage IGBT power module rated at 800A and 1700V, utilizing Infineon's advanced trench-gate IGBT cell technology paired with fast-recovery emitter-controlled diodes. The module is configured as a single-switch (chopper/boost) topology housed in a robust press-fit baseplate package, engineered for low thermal resistance and reliable performance under continuous high-power cycling. With low VCE(sat) and optimized switching characteristics, this device is suited for the most thermally and electrically stressed positions in industrial power conversion systems.

    The FD800R17KE3_B2 sees wide deployment in industrial medium-voltage drives, regenerative braking choppers, traction inverters, UPS systems, and grid-tied renewable energy converters operating in the 690V AC bus range. Its 1700V blocking voltage provides the necessary derating margin when switching inductive loads on stiff DC links derived from three-phase rectification of medium-voltage supplies. The module is equally at home in offshore wind pitch control systems, large-format induction heating equipment, and high-power welding inverters where reliability under sustained load is non-negotiable.

    Quick Reference: FD800R17KE3_B2

    Part Number FD800R17KE3_B2
    Manufacturer Infineon Technologies
    Type IGBT Power Module
    Collector Current (IC) 800A
    Collector-Emitter Voltage (VCES) 1700V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the FD800R17KE3_B2:

    • 1700V VCES blocking voltage with 800A rated collector current, providing robust derating headroom in 690V AC drive topologies
    • Trench-gate IGBT cell structure delivers reduced VCE(sat) for lower conduction losses under high duty-cycle operation
    • Integrated fast-recovery emitter-controlled freewheeling diodes with soft reverse-recovery characteristics, minimizing EMI and switching stress
    • Low thermal resistance junction-to-case (Rth(j-c)) enabling efficient heat extraction through direct-mounted or liquid-cooled heatsink assemblies
    • Press-fit baseplate package with industry-standard footprint for straightforward retrofits and platform-level interchangeability
    • Short-circuit withstand capability (tpsc ≥ 10µs) for reliable protection coordination in gate-driver fault response designs

    With a current factory lead time of 99 weeks, procurement teams relying solely on the Infineon supply chain face serious exposure to production downtime. For OEM manufacturers managing safety stock, MRO buyers supporting critical infrastructure, and repair depots servicing fielded equipment, waiting nearly two years for a replacement module is simply not viable. ATI Accurate Technology maintains inventory of hard-to-find and long-lead-time Infineon IGBT modules precisely for these situations — providing a reliable bridge between immediate need and extended factory schedules without compromising on new OEM part quality.

    ATI Accurate Technology is located in Palmetto, Florida and ships same-day on orders placed before 5PM EST. Whether you need a single replacement module or volume quantities for a production run, our team is ready to help. Contact us at 239-734-7566 or sales@igbts.us for real-time stock confirmation, datasheet support, and volume pricing on the FD800R17KE3_B2 and the full range of Infineon IGBT modules.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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In Stock: 1
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  • 9 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $1,027.00 USD
Regular price Sale price $1,027.00 USD
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