BSM100GB120DN2FE3256-INFINEON
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  • BSM100GB120DN2FE3256-INFINEON
  • BSM100GB120DN2FE3256
  • INFINEON
  • Semikron Diode Bridge Module
  • Data Sheet for BSM100GB120DN2FE3256
  • Description

    The BSM100GB120DN2FE3256 is a high-performance IGBT module from Infineon Technologies, rated at 100A and 1200V. Designed on Infineon's proven DN2 platform, this module integrates fast-switching IGBT chips with anti-parallel freewheeling diodes optimized for hard-switching and soft-switching topologies. The FE3256 variant is engineered for extended reliability, low thermal resistance, and consistent gate characteristics, making it a preferred choice in systems where thermal management and switching precision are non-negotiable. It is housed in a standard power module package compatible with widely used heatsink configurations.

    This IGBT module is well-suited for a broad range of industrial and commercial power electronics applications. Typical deployments include three-phase AC motor drives, industrial servo systems, solar inverters, wind turbine converters, induction heating equipment, and uninterruptible power supplies. Its 1200V blocking voltage and 100A current rating make it appropriate for medium-power drive stages operating from 480V to 690V AC bus systems. Engineers specifying this part benefit from Infineon's tightly controlled switching parameters, which simplify gate driver design and thermal modeling in converter platforms requiring high cycle reliability.

    Quick Reference: BSM100GB120DN2FE3256

    Part Number BSM100GB120DN2FE3256
    Manufacturer Infineon Technologies
    Type IGBT Module
    Current Rating 100A
    Voltage Rating 1200V
    Availability In Stock — Same-Day Shipping
    Condition New OEM

    Key Features of the BSM100GB120DN2FE3256:

    • 1200V collector-emitter voltage (VCES) with 100A continuous collector current (IC) for medium-power converter stages
    • DN2 platform design optimized for low switching losses and controlled di/dt and dv/dt behavior under hard-switching conditions
    • Integrated anti-parallel freewheeling diodes with soft-recovery characteristics to reduce EMI and voltage overshoot
    • Low thermal resistance junction-to-case (RthJC) enabling high power density designs with standard forced-air or liquid-cooled heatsinks
    • Robust short-circuit withstand capability supporting reliable gate driver protection schemes in fault-prone industrial environments
    • FE3256 package configuration with industry-standard baseplate footprint for straightforward drop-in replacement in existing drive platforms

    With a current factory lead time of 99 weeks, procurement teams relying solely on the original equipment manufacturer or authorized distribution channels face significant exposure to production downtime and project delays. For maintenance operations requiring rapid field replacement, or OEM build schedules that cannot absorb nearly two years of wait time, sourcing from a stocking distributor with verified new OEM inventory is the only practical solution. ATI Accurate Technology maintains stock of hard-to-find and long-lead-time IGBT modules specifically to close this gap for engineers and buyers who cannot afford to wait.

    ATI Accurate Technology is located in Palmetto, Florida, and ships power semiconductor modules same-day on orders placed before 5PM EST. Our inventory includes new OEM IGBTs, thyristors, diodes, and rectifier modules from leading manufacturers including Infineon. Contact our team for volume pricing, cross-reference assistance, or expedited fulfillment. Call 239-734-7566 or email sales@igbts.us to check availability and place your order today.

NEED 25PCS OR MORE ... CALL FOR SPECIAL PRICING 239-734-7566
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In Stock: 9
  • 9
  • 24 (Can ship in We can ship in 7-10 Days)
  • 99 Weeks
Regular price $295.80 USD
Regular price Sale price $295.80 USD
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